ELECTRON-ENERGY LOSS STUDIES OF DIRECT NON-VERTICAL INTERBAND-TRANSITIONS IN SILICON

被引：9

作者：

CHEN, CH

机构：

[1] CORNELL UNIV, SCH APPL & ENGN PHYS, ITHACA, NY 14853 USA

[2] CORNELL UNIV, CTR HUMAN DEV, ITHACA, NY 14853 USA

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1977年 / 83卷 / 01期

关键词：

D O I：

10.1002/pssb.2220830139

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：347 / 351

页数：5

相关论文

共 8 条

[1] ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD
CARDONA, M
POLLAK, FH
[J]. PHYSICAL REVIEW, 1966, 142 (02): : 530 - &
[2] CALCULATED VALENCE-BAND DENSITIES OF STATES AND PHOTOEMISSION SPECTRA OF DIAMOND AND ZINCBLENDE SEMICONDUCTORS
CHELIKOWSKY, J
CHADI, DJ
COHEN, ML
[J]. PHYSICAL REVIEW B, 1973, 8 (06) : 2786 - 2794
[3] WIEN FILTER FOR USE AS AN ENERGY ANALYZER WITH AN ELECTRON MICROSCOPE
CURTIS, GH
SILCOX, J
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1971, 42 (05) : 630 - +
[4] METHOD FOR PRODUCING LARGE SI FILMS FOR PRESELECTED IMPERFECTION ANALYSIS
LAWRENCE, JE
KOEHLER, H
[J]. JOURNAL OF SCIENTIFIC INSTRUMENTS, 1965, 42 (04): : 270 - &
[5] DIRECT NONVERTICAL INTERBAND AND INTRABAND TRANSITIONS IN AL
PETRI, E
OTTO, A
[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (20) : 1283 - 1286
[6] INFLUENCE OF OXIDE LAYERS ON DETERMINATION OF OPTICAL PROPERTIES OF SILICON
PHILIPP, HR
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) : 2835 - &
[7] OPTICAL PROPERTIES OF SEMICONDUCTORS
PHILIPP, HR
EHRENREICH, H
[J]. PHYSICAL REVIEW, 1963, 129 (04): : 1550 - &
[8] FREQUENCY-VECTOR-DEPENDENT AND WAVE-VECTOR-DEPENDENT DIELECTRIC FUNCTION FOR SILICON
WALTER, JP
COHEN, ML
[J]. PHYSICAL REVIEW B, 1972, 5 (08): : 3101 - +