A NEW MINORITY-CARRIER LIFETIME MODEL FOR HEAVILY DOPED GAAS AND INGAASP TO OBTAIN ANALYTICAL SOLUTIONS

被引：14

作者：

SELVAKUMAR, CR

机构：

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 07期

关键词：

D O I：

10.1016/0038-1101(87)90119-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：773 / 774

页数：2

共 13 条

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[3]

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DUTTA, NK .

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SCHMID, W .

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[7] OPTICAL PROPERTIES OF N-TYPE GAAS .I. DETERMINATION OF HOLE DIFFUSION LENGTH FROM OPTICAL ABSORPTION AND PHOTOLUMINESCENCE MEASUREMENTS [J].

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[8]

SCHLACHETZKI A, 1982, 1981 P INT WORKSH PH, P601

[9] SIMPLE GENERAL ANALYTICAL SOLUTION TO THE MINORITY-CARRIER TRANSPORT IN HEAVILY DOPED SEMICONDUCTORS [J].

SELVAKUMAR, CR .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (12) :3476-3478

[10] PHOTO-EXCITED CARRIER LIFETIME AND AUGER RECOMBINATION IN 1.3-MU-M INGAASP [J].

SERMAGE, B ;

EICHLER, HJ ;

HERITAGE, JP ;

NELSON, RJ ;

DUTTA, NK .

APPLIED PHYSICS LETTERS, 1983, 42 (03) :259-261

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