DISPLACEMENT OF GROUP-III, GROUP-IV, GROUP-V, AND GROUP-VI IMPURITIES IN SI BY ANALYZING BEAM

By means of 2 MeV He+ backscattering and 1.5 MeV H+ backscattering and nuclear reaction analysis in combination with the channeling technique, displacement of impurity atoms in Si from substitutional into non-substitutional positions under bombardment is studied. In this paper we report on the displacement of Ga, Ge, P, As, Sb, Bi, Se and Te in Si single crystals. It appears that displacement of impurity atoms is not an exception but almost a rule. The only element for which we did not find an effect was Ge. Values for the displacement rate were derived and appeared to be, with the exception for Ge, all of the same order of magnitude. © 1978.