PROBING OF GUNN EFFECT DOMAINS WITH A SCANNING ELECTRON MICROSCOPE

被引:10
作者
ROBINSON, GY
WHITE, RM
MACDONALD, NC
机构
[1] Department of Electrical Engineering and Computer Sciences, University of California, Berkeley
关键词
D O I
10.1063/1.1652493
中图分类号
O59 [应用物理学];
学科分类号
摘要
The high-field domains in a Gunn effect diode operating in the transit-time mode have been probed with a pulsed electron beam in a scanning electron microscope. The collected secondary emission current, when plotted as a function of both time and distance, clearly shows the propagation from cathode to anode of a region of high electric field. The probing technique is shown to offer micron spatial and subnanosecond temporal resolution. © 1969 The American Institute of Physics.
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页码:407 / +
页数:1
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