ETCHING OF TUNGSTEN WITH XEF2 - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY

被引：30

作者：

BENSAOULA, A

GROSSMAN, E

IGNATIEV, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 11期

关键词：

D O I：

10.1063/1.339054

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4587 / 4590

页数：4

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