ION ENHANCED REACTIVE ETCHING OF TUNGSTEN SINGLE-CRYSTALS AND FILMS WITH XEF2

被引：21

作者：

BENSAOULA, A

STROZIER, JA

IGNATIEV, A

YU, J

WOLFE, JC

机构：

[1] UNIV HOUSTON,DEPT ELECT ENGN,HOUSTON,TX 77004

[2] SUNY STONY BROOK,STONY BROOK,NY 11790

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574492

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1921 / 1924

页数：4

共 11 条

[1] DIRECT-CURRENT-MAGNETRON DEPOSITION OF MOLYBDENUM AND TUNGSTEN WITH RF-SUBSTRATE BIAS [J].

BENSAOULA, A ;

WOLFE, JC ;

IGNATIEV, A ;

FONG, FO ;

LEUNG, TS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :389-392

[2] DEPOSITION AND REACTIVE ION ETCHING OF MOLYBDENUM [J].

BENSAOULA, A ;

WOLFE, JC ;

ORO, JA ;

IGNATIEV, A .

APPLIED PHYSICS LETTERS, 1983, 42 (01) :122-123

[3]

BENSAOULA A, 1986, MATERIALS RES SOC P, V68, P429

[4] ANGULAR-DEPENDENCE OF ETCHING YIELD OF SINGLE-CRYSTAL SI IN CL2 REACTIVE ION-BEAM ETCHING [J].

KRUEGER, EE ;

RUOFF, AL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06) :1650-1651

[5]

LIN CL, 1986, MATERIALS RES SOC P, V68, P47

[6] PREPARATION OF X-RAY-LITHOGRAPHY MASKS USING A TUNGSTEN REACTIVE ION ETCHING PROCESS [J].

RANDALL, JN ;

WOLFE, JC .

APPLIED PHYSICS LETTERS, 1982, 41 (03) :247-248

[7] HIGH-RESOLUTION PATTERN DEFINITION IN TUNGSTEN [J].

RANDALL, JN ;

WOLFE, JC .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :742-743

[8] REACTIVE-ION ETCHING OF 0.2-MU-M PERIOD GRATINGS IN TUNGSTEN AND MOLYBDENUM USING CBRF3 [J].

SCHATTENBURG, ML ;

PLOTNIK, I ;

SMITH, HI .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :272-275

[9]

STROZIER JA, IN PRESS

[10] TUNGSTEN ETCHING IN CF4 AND SF6 DISCHARGES [J].

TANG, CC ;

HESS, DW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (01) :115-120

← 1 2 →