THEORY OF DEPLETION-LAYER RECOMBINATION IN SILICON P-N-JUNCTIONS

被引：5

作者：

ANDERSON, PJ

BUCKINGHAM, MJ

机构：

[1] UNIV READING,JJ THOMPSON PHYS LAB,READING RG6 2AL,BERKSHIRE,ENGLAND

[2] ROYAL AIRCRAFT ESTAB,DEPT RADIO & NAVIGAT,FARNBOROUGH GU14 6TD,HAMPSHIRE,ENGLAND

来源：

ELECTRONICS LETTERS | 1977年 / 13卷 / 17期

关键词：

D O I：

10.1049/el:19770364

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：496 / 498

页数：3

共 8 条

[1] ON THEORY OF LOGARITHMIC SILICON DIODES [J].

BUCKINGH.MJ ;

FAULKNER, EA .

RADIO AND ELECTRONIC ENGINEER, 1969, 38 (01) :33-+

[2] MODIFIED THEORY OF CURRENT/VOLTAGE RELATION IN SILICON P-N JUNCTIONS [J].

FAULKNER, EA ;

BUCKINGHAM, MJ .

ELECTRONICS LETTERS, 1968, 4 (17) :359-+

[3] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].

HALL, RN .

PHYSICAL REVIEW, 1952, 87 (02) :387-387

[4] GENERATION-RECOMBINATION CHARACTERISTIC BEHAVIOR OF SILICON DIODES [J].

NUSSBAUM, A .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 19 (02) :441-450

[5] ELECTRON-HOLE RECOMBINATION STATISTICS IN SEMICONDUCTORS THROUGH FLAWS WITH MANY CHARGE CONDITIONS [J].

SAH, CT ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1958, 109 (04) :1103-1115

[6] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243

[7] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842

[8] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J].

SHOCKLEY, W .

BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489

← 1 →