ABINITIO THEORY OF POLAR SEMICONDUCTOR SURFACES .2. (2X2) RECONSTRUCTIONS AND RELATED PHASE-TRANSITIONS OF GAAS(111)

被引：60

作者：

KAXIRAS, E ^{[1
]}

BARYAM, Y ^{[1
]}

JOANNOPOULOS, JD ^{[1
]}

PANDEY, KC ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.35.9636

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：9636 / 9643

页数：8

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共 20 条

[1] ALONSO M, 1985, J VAC SCI TECHNOL A, V3, P1595
[2] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS
ARTHUR, JR
[J]. SURFACE SCIENCE, 1974, 43 (02) : 449 - 461
[3] MODEL-INDEPENDENT STRUCTURE DETERMINATION OF THE INSB(111)2X2 SURFACE WITH USE OF SYNCHROTRON X-RAY-DIFFRACTION
BOHR, J
FEIDENHANSL, R
NIELSEN, M
TONEY, M
JOHNSON, RL
ROBINSON, IK
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (12) : 1275 - 1278
[4] COMPARISON BETWEEN THE ELECTRONIC-STRUCTURES OF GAAS(111) AND GAAS(111) FROM ANGLE-RESOLVED PHOTOEMISSION
BRINGANS, RD
BACHRACH, RZ
[J]. PHYSICAL REVIEW LETTERS, 1984, 53 (20) : 1954 - 1957
[5] VACANCY-INDUCED 2X2 RECONSTRUCTION OF THE GA(111) SURFACE OF GAAS
CHADI, DJ
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (21) : 1911 - 1914
[6] CHADI JD, 1986, PHYS REV LETT, V57, P102
[7] SURFACE STRUCTURES AND PHOTOLUMINESCENCE OF MOLECULAR BEAM EPITAXIAL FILMS OF GAAS
CHO, AY
HAYASHI, I
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (02) : 125 - &
[8] FARRELL HH, UNPUB
[9] SURFACE STRUCTURES AND PROPERTIES OF DIAMOND-STRUCTURE SEMICONDUCTORS
HANEMAN, D
[J]. PHYSICAL REVIEW, 1961, 121 (04): : 1093 - &
[10] THEORY OF POLAR SEMICONDUCTOR SURFACES
HARRISON, WA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1492 - 1496