DEPTH DISTRIBUTIONS AND RANGE AND SHAPE-PARAMETERS FOR H-1 AND H-2 IMPLANTED INTO SI AND GAAS IN RANDOM AND CHANNELING ORIENTATIONS

被引：11

作者：

WILSON, RG

机构：

来源：

关键词：

D O I：

10.1063/1.337875

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2826 / 2835

页数：10

共 42 条

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