DAMAGE PRODUCTION IN GAAS BY H+ IRRADIATION

被引：5

作者：

BHATTACHARYA, RS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 09期

关键词：

D O I：

10.1063/1.332774

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5039 / 5042

页数：4

共 18 条

[1] MESSUNG DER ENERGIE ZUR VERLAGERUNG EINES GITTERATOMS DURCH ELEKTRONENSTOB IN AIIIBV-VERBINDUNGEN [J].

BAUERLEIN, R .

ZEITSCHRIFT FUR PHYSIK, 1963, 176 (04) :498-&

[2] DOSE DEPENDENCE OF EPITAXIAL REGROWTH OF SE-IMPLANTED GAAS [J].

BHATTACHARYA, RS ;

PRONKO, PP ;

LING, SC ;

WILSON, SR .

APPLIED PHYSICS LETTERS, 1982, 40 (06) :502-504

[3] DAMAGE AND LATTICE LOCATION STUDIES OF SI-IMPLANTED GAAS [J].

BHATTACHARYA, RS ;

PRONKO, PP .

APPLIED PHYSICS LETTERS, 1982, 40 (10) :890-892

[4]

BHATTACHARYA RS, 1982, J APPL PHYS, V53, P1803

[5]

Corbett J. W., 1975, POINT DEFECTS SOLIDS, P118

[6] OPTICAL AND ELECTRICAL PROPERTIES OF PROTON-BOMBARDED P-TYPE GAAS [J].

DYMENT, JC ;

NORTH, JC ;

DASARO, LA .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :207-213

[7]

EISEN FH, 1964, PHYS REV A-GEN PHYS, V135, P1394

[8] ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT [J].

FOYT, AG ;

LINDLEY, WT ;

WOLFE, CM ;

DONNELLY, JP .

SOLID-STATE ELECTRONICS, 1969, 12 (04) :209-&

[9] INNER-SHELL VACANCY PRODUCTION IN ION-ATOM COLLISIONS [J].

GARCIA, JD ;

FORTNER, RJ ;

KAVANAGH, TM .

REVIEWS OF MODERN PHYSICS, 1973, 45 (02) :111-177

[10] THE DISPLACEMENT OF ATOMS IN SOLIDS BY RADIATION [J].

KINCHIN, GH ;

PEASE, RS .

REPORTS ON PROGRESS IN PHYSICS, 1955, 18 :1-51

← 1 2 →