GROWTH OF EPITAXIAL CASI2 FILMS ON SI(111)

被引：22

作者：

MORAR, JF

WITTMER, M

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.575697

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

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页码：1340 / 1342

页数：3

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共 12 条

[1] THE ELECTRON-STATES OF SILICIDES - RESULTS AND PERSPECTIVES
BRAICOVICH, L
[J]. THIN SOLID FILMS, 1986, 140 (01) : 79 - 88
[2] PHOTOEMISSION AND BAND-STRUCTURE RESULTS FOR NISI-2
CHABAL, YJ
HAMANN, DR
ROWE, JE
SCHLUTER, M
[J]. PHYSICAL REVIEW B, 1982, 25 (12): : 7598 - 7602
[3] ELECTRICAL PROPERTIES OF ALKALINE-EARTH DISILICIDES AND DIGERMANIDES
EVERS, J
WEISS, A
[J]. MATERIALS RESEARCH BULLETIN, 1974, 9 (05) : 549 - 553
[4] TRANSFORMATION OF 3-CONNECTED SILICON NETS IN CASI2
EVERS, J
[J]. JOURNAL OF SOLID STATE CHEMISTRY, 1979, 28 (03) : 369 - 377
[5] SILICON INTERACTION WITH LOW-ELECTRONEGATIVITY METALS - INTERDIFFUSION AND REACTION AT THE CA/SI(111) INTERFACE
FRANCIOSI, A
WEAVER, JH
PETERSON, DT
[J]. PHYSICAL REVIEW B, 1985, 31 (06): : 3606 - 3610
[6] GIBBS LD, UNPUB
[7] METALLIC CASI2 EPITAXIAL-FILMS ON SI(111)
MORAR, JF
WITTMER, M
[J]. PHYSICAL REVIEW B, 1988, 37 (05): : 2618 - 2621
[8] MORAR JF, UNPUB
[9] BONDING AND STRUCTURE OF COSI2 AND NISI2
TERSOFF, J
HAMANN, DR
[J]. PHYSICAL REVIEW B, 1983, 28 (02): : 1168 - 1170
[10] EPITAXIAL SILICIDES
TUNG, RT
POATE, JM
BEAN, JC
GIBSON, JM
JACOBSON, DC
[J]. THIN SOLID FILMS, 1982, 93 (1-2) : 77 - 90