IDENTIFICATION OF A 2ND ENERGY-LEVEL OF EL2 IN N-TYPE GAAS

被引：27

作者：

OMLING, P

SILVERBERG, P

SAMUELSON, L

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.38.3606

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3606 / 3609

页数：4

共 16 条

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[2]

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[8] ARSENIC ANTISITE DEFECT ASGA AND EL2 IN GAAS [J].

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[9]

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[10] ELECTRICAL AND OPTICAL-PROPERTIES OF DEEP LEVELS IN MOVPE GROWN GAAS [J].

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