FUNDAMENTALS OF JUNCTION MEASUREMENTS IN THE STUDY OF DEEP ENERGY-LEVELS IN SEMICONDUCTORS

被引：80

作者：

GRIMMEISS, HG

OVREN, C

机构：

来源：

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS | 1981年 / 14卷 / 09期

关键词：

D O I：

10.1088/0022-3735/14/9/002

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：1032 / 1042

页数：11

共 22 条

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