EPITAXIAL SRTIO3 THIN-FILMS GROWN BY ARF EXCIMER LASER DEPOSITION

SrTiO3 (STO) thin films were prepared by an ArF excimer laser deposition method. At the growth temperature of 630-degrees-C, the natural orientation of STO was significantly changed from (111) to (100) and (110). The ratio of X-ray diffraction intensities (100)/(200) was closest to the ideal value when grown at 660-degrees-C, resulting in minimized disorder of atomic arrangement. Epitaxial STO films were obtained on STO(100) and MgO(100) substrates, and on an YBaCuO(001) epitaxial film. They showed resistivity in excess of 5 x 10(10) OMEGA-cm and dielectric constant as high as 140-epsilon-0 at room temperature. The maximum dielectric constant of 440-epsilon-0 was obtained at 40 K.