PHOTO-LUMINESCENCE OF GAAS1-XPX-N WITH 0.67 LESS-THAN-OR-EQUAL-TO X LESS-THAN 1 AT VARIOUS EXCITATION-LEVELS AND N DOPING

被引：8

作者：

STEGMANN, R

NURTDINOV, NR

YUNOVICH, AE

OELGART, G

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 62卷 / 01期

关键词：

D O I：

10.1002/pssa.2210620153

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K49 / K52

页数：4

共 7 条

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[3]

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SWETS, DE .

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[6] IDENTIFICATION OF RECOMBINATION LUMINESCENCE TRANSITIONS IN N-DOPED GAAS1-XPX (X=0.87) [J].

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[7] NITROGEN TRAP IN THE SEMICONDUCTOR ALLOYS GAAS1-XPX AND ALXGA1-XAS [J].

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