THEORY OF BOUND-STATES INDUCED BY DISORDER AND ISOELECTRONIC POTENTIALS - GA(AS,P)=N

被引：22

作者：

KLEIMAN, GG

机构：

[1] UNIV ESTADUAL CAMPINAS,INST FIS,CAMPINAS,SAO PAULO,BRAZIL

[2] UNIV NACL AUTONOMA MEXICO,INST FIS,MEXICO CITY 20,MEXICO

来源：

PHYSICAL REVIEW B | 1977年 / 15卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.15.802

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：802 / 811

页数：10

共 25 条

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[7] CRAFORD MG, 1975, OPTICAL PROPERTIES S, pCH5
[8] RESONANT ENHANCEMENT OF RECOMBINATION PROBABILITY ASSOCIATED WITH ISOELECTRONIC TRAP STATES IN SEMICONDUCTOR ALLOYS IN1-XGAXP-N LASER OPERATION (77 DEGREES K) IN YELLOW-GREEN LAMBDA LESS-THAN-OR-EQUAL-TO 5560 A, H-OMEGA GREATER-THAN-OR-EQUAL-TO 2.23 EV
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