PHOTOLUMINESCENCE INVESTIGATIONS OF GRADED, TOTALLY RELAXED GEXSI1-X STRUCTURES

被引：14

作者：

MICHEL, J ^{[1
]}

FITZGERALD, EA ^{[1
]}

XIE, YH ^{[1
]}

SILVERMAN, PJ ^{[1
]}

MORSE, M ^{[1
]}

KIMERLING, LC ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1992年 / 21卷 / 12期

关键词：

DISLOCATION RELATED D-BANDS; SIGE/SI; PHOTOLUMINESCENCE;

D O I：

10.1007/BF02667600

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

MBE grown, totally relaxed, graded GexSi1-x on Si heterostructures were studied by using photoluminescence spectroscopy at 4.2 K. The existence and linewidth of the near band gap bound exciton recombination confirms the high quality of these layers. Due to the relaxation we find dislocation related D-bands in the near infrared region of the photoluminescence spectra. The dislocation band D4 proved to be an effective tool for measuring residual strain in the heteroepitaxial layer because of its large line-shift in the presence of strain. We found tensile strain of 0.4% at the interface between the SiGe layer and the Si substrate.

引用

页码：1099 / 1104

页数：6

共 18 条

[1] TOTALLY RELAXED GEXSI1-X LAYERS WITH LOW THREADING DISLOCATION DENSITIES GROWN ON SI SUBSTRATES [J].