HOT-ELECTRON-INDUCED INSTABILITY IN 0.5-MU-M P-CHANNEL MOSFETS PATTERNED USING SYNCHROTRON X-RAY-LITHOGRAPHY

被引：22

作者：

HSU, CCH

WANG, LK

WORDEMAN, MR

NING, TH

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 07期

关键词：

D O I：

10.1109/55.29668

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：327 / 329

页数：3

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