ROOM-TEMPERATURE HYDROGENATION EFFECT ON SI-ION-IMPLANTED AND BE-ION-IMPLANTED GAAS

Hydrogenation effects on Si- and Be-ion-implanted GaAs exposed to the hydrogen plasma were investigated. In the sample hydrogenated for 60 min at room temperature, electron mobilities were increased about 21% at 300 K and 1400 cm2/V s at 150 K, showing a little change of the activated Si donor profile. Also, by using deep-level transient spectroscopy and optical deep-level transient spectroscopy, it was observed that the electron and hole traps at E(c) - 0.62- and E(upsilon) + 0.68-eV levels, which have been reported as defects due to the implanted damage, were efficiently decreased during the room-temperature hydrogenation. This effect persists during the anneal at 400-degrees-C during 5 min in an argon ambient.