ACTIVATION OF BE-IMPLANTED GAAS BY USING RTA WITH PROXIMITY CONTACT

被引：7

作者：

LU, YC

DEARAUJO, CAP

KALKUR, TS

机构：

[1] Microelectronics Research Laboratories, Department of Electrical Engineering, University of Colorado, Colorado Springs

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 06期

关键词：

D O I：

10.1149/1.2086828

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Rapid thermal annealing (RTA) combined with proximity contact techniques has been used to activate Be-implanted GaAs, At the optimum RTA condition, which is 900°C for 5s, complete activation was achieved. The SIMS analyses show less dopant redistribution during RTA in comparison with furnace annealing. The proximity contact effectively suppressed arsenic loss and minimized GaAs surface morphology degradation. © 1990, The Electrochemical Society, Inc. All rights reserved.

引用

页码：1904 / 1907

页数：4

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