ELECTRICAL CHARACTERISTICS OF BE-IMPLANTED GAAS ACTIVATED BY RAPID THERMAL ANNEALING

被引：7

作者：

MAEZAWA, K

OE, K

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 01期

关键词：

D O I：

10.1109/EDL.1986.26276

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：13 / 15

页数：3

共 13 条

[1] RADIATION ANNEALING OF GAAS IMPLANTED WITH SI [J].

ARAI, M ;

NISHIYAMA, K ;

WATANABE, N .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) :L124-L126

[2] APPLICATION OF THERMAL PULSE ANNEALING TO ION-IMPLANTED GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

ASBECK, PM ;

MILLER, DL ;

BABCOCK, EJ ;

KIRKPATRICK, CG .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) :81-84

[3] ANNEALING OF MG IMPLANTS IN GAAS USING INCOHERENT RADIATION [J].

BLUNT, RT ;

SZWEDA, R ;

LAMB, MSM ;

CULLIS, AG .

ELECTRONICS LETTERS, 1984, 20 (11) :444-446

[4] SHALLOW BERYLLIUM IMPLANTATION IN GAAS ANNEALED BY RAPID THERMAL ANNEALING [J].

CHAMBON, P ;

BERTH, M ;

PREVOT, B .

APPLIED PHYSICS LETTERS, 1985, 46 (02) :162-164

[5] BERYLLIUM DOPING AND DIFFUSION IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J].

ILEGEMS, M .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :1278-1287

[6] INFRARED RAPID THERMAL ANNEALING FOR GAAS DEVICE FABRICATION [J].

KOHZU, H ;

KUZUHARA, M ;

TAKAYAMA, Y .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :4998-5003

[7] INFRARED RAPID THERMAL ANNEALING OF SI-IMPLANTED GAAS [J].

KUZUHARA, M ;

KOHZU, H ;

TAKAYAMA, Y .

APPLIED PHYSICS LETTERS, 1982, 41 (08) :755-758

[8] ELECTRICAL PROFILING AND OPTICAL ACTIVATION STUDIES OF BE-IMPLANTED GAAS [J].

MCLEVIGE, WV ;

HELIX, MJ ;

VAIDYANATHAN, KV ;

STREETMAN, BG .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3342-3346

[9] A NEW P-CHANNEL ALGAAS/GAAS MIS-LIKE HETEROSTRUCTURE FET EMPLOYING 2 DIMENSIONAL HOLE GAS [J].

OE, K ;

HIRANO, M ;

ARAI, K ;

YANAGAWA, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (05) :L335-L337

[10] APPLICATION OF THE LAMP-ANNEALING METHOD TO THE N+-LAYER OF WSIX-GATE SELF-ALIGNED GAAS-MESFETS [J].

OHNISHI, T ;

YAMAGUCHI, Y ;

INADA, T ;

YOKOYAMA, N ;

NISHI, H .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (10) :403-405

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