APPLICATION OF THE LAMP-ANNEALING METHOD TO THE N+-LAYER OF WSIX-GATE SELF-ALIGNED GAAS-MESFETS

被引：7

作者：

OHNISHI, T

YAMAGUCHI, Y

INADA, T

YOKOYAMA, N

NISHI, H

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 10期

关键词：

D O I：

10.1109/EDL.1984.25964

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：403 / 405

页数：3

共 12 条

[1] RADIATION ANNEALING OF GAAS IMPLANTED WITH SI [J].

ARAI, M ;

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) :L124-L126

[2] INCOHERENT ANNEALING OF IMPLANTED LAYERS IN GAAS [J].

DAVIES, DE ;

MCNALLY, PJ ;

LORENZO, JP ;

JULIAN, M .

ELECTRON DEVICE LETTERS, 1982, 3 (04) :102-103

[3] INFLUENCE OF N+-LAYER-GATE GAP ON SHORT-CHANNEL EFFECTS OF GAAS SELF-ALIGNED MESFETS (SAINT) [J].

KATO, N ;

MATSUOKA, Y ;

OHWADA, K ;

MORIYA, S .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (11) :417-419

[4] INFRARED RAPID THERMAL ANNEALING OF SI-IMPLANTED GAAS [J].

KUZUHARA, M ;

KOHZU, H ;

TAKAYAMA, Y .

APPLIED PHYSICS LETTERS, 1982, 41 (08) :755-758

[5] ORIENTATION EFFECT ON PLANAR GAAS SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J].

LEE, CP ;

ZUCCA, R ;

WELCH, BM .

APPLIED PHYSICS LETTERS, 1980, 37 (03) :311-313

[6]

MATSUMOTO K, 1982, P INT S GAAS RELATED, P317

[7]

NAKAYAMA Y, 1983, ISSCC, P48

[8] CHARACTERIZATION OF WSIX/GAAS SCHOTTKY CONTACTS [J].

OHNISHI, T ;

YOKOYAMA, N ;

ONODERA, H ;

SUZUKI, S ;

SHIBATOMI, A .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :600-602

[9] HIGH-TRANSCONDUCTANCE SELF ALIGNED GAAS-MESFET USING IMPLANTATION THROUGH AN AIN LAYER [J].

ONODERA, H ;

YOKOYAMA, N ;

KAWATA, H ;

NISHI, H ;

SHIBATOMI, A .

ELECTRONICS LETTERS, 1984, 20 (01) :45-47

[10] ORIENTATION EFFECT OF SELF-ALIGNED SOURCE DRAIN PLANAR GAAS SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J].

YOKOYAMA, N ;

ONODERA, H ;

OHNISHI, T ;

SHIBATOMI, A .

APPLIED PHYSICS LETTERS, 1983, 42 (03) :270-271

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