INCREASED CURRENT GAIN AND SUPPRESSION OF PERIPHERAL BASE CURRENTS IN SILICIDED SELF-ALIGNED NARROW-WIDTH POLYSILICON-EMITTER TRANSISTORS OF AN ADVANCED BICMOS TECHNOLOGY

被引：10

作者：

ELDIWANY, MH ^{[1
]}

BRASSINGTON, MP ^{[1
]}

TUNTASOOD, P ^{[1
]}

机构：

[1] NATL SEMICOND CORP,FAIRCHILD RES CTR,PALO ALTO,CA 94304

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 05期

关键词：

D O I：

10.1109/55.705

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：247 / 249

页数：3

相关论文

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