DESIGN CONSIDERATIONS OF HIGH-PERFORMANCE NARROW-EMITTER BIPOLAR-TRANSISTORS

[1] EVALUATION OF ELECTRON INJECTION CURRENT-DENSITY IN P-LAYERS FOR INJECTION MODELING OF I2L [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (02) : 205 - 206

[2] LI GP, 1987, UNPUB IEEE T EL 0120

[3] SELF-ALIGNED BIPOLAR-TRANSISTORS FOR HIGH-PERFORMANCE AND LOW-POWER-DELAY VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) : 1010 - 1013

[4] Petersen S. A., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P22

[5] SATURATION CURRENTS IN SMALL-GEOMETRY BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) : 80 - 82

[6] TUNNELING IN BASE-EMITTER JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1527 - 1534

[7] BIPOLAR-TRANSISTOR DESIGN FOR OPTIMIZED POWER-DELAY LOGIC-CIRCUITS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (04) : 679 - 684

[8] FABRICATION OF HIGH-PERFORMANCE LDDFETS WITH OXIDE SIDEWALL-SPACER TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 590 - 596

[1] EVALUATION OF ELECTRON INJECTION CURRENT-DENSITY IN P-LAYERS FOR INJECTION MODELING OF I2L [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (02) : 205 - 206

[2] LI GP, 1987, UNPUB IEEE T EL 0120

[3] SELF-ALIGNED BIPOLAR-TRANSISTORS FOR HIGH-PERFORMANCE AND LOW-POWER-DELAY VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) : 1010 - 1013

[4] Petersen S. A., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P22

[5] SATURATION CURRENTS IN SMALL-GEOMETRY BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) : 80 - 82

[6] TUNNELING IN BASE-EMITTER JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1527 - 1534

[7] BIPOLAR-TRANSISTOR DESIGN FOR OPTIMIZED POWER-DELAY LOGIC-CIRCUITS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (04) : 679 - 684

[8] FABRICATION OF HIGH-PERFORMANCE LDDFETS WITH OXIDE SIDEWALL-SPACER TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 590 - 596