DISLOCATIONS AND TWINS IN CZOCHRALSKI-GROWN GALLIUM PHOSPHIDE SINGLE CRYSTALS

[1] DETECTION OF SELENIUM CLUSTERING IN GAAS BY TRANSMISSION ELECTRON MICROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 760 - &

[2] TWINS AND STACKING FAULTS IN VAPOR GROWN GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (06) : 927 - &

[3] Bass S. J., 1968, Journal of Crystal Growth, V3-4Spe, P286, DOI 10.1016/0022-0248(68)90155-3

[4] BASS SJ, 1968, J CRYST GROWTH, V2, P169

[5] PREPARATION OF GAAS SPECIMENS FOR TRANSMISSION ELECTRON MICROSCOPY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (10) : 1088 - +

[6] LOW-TEMPERATURE REACTOR IRRADIATION EFFECTS IN METALS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (06) : 639 - 644

[7] DISLOCATIONS IN MECHANICALLY DEFORMED GE [J]. ACTA METALLURGICA, 1962, 10 (OCT): : 993 - &

[8] TRIPYRAMIDS AND ASSOCIATED DEFECTS IN EPITAXIAL SILICON LAYERS [J]. PHILOSOPHICAL MAGAZINE, 1965, 11 (113): : 1007 - &

[9] PREPARATION OF [100]-ORIENTED FOILS OF GAAS FOR TRANSMISSION ELECTRON MICROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) : 1980 - &

[10] CAHN RW, 1964, MET SOC C AIME, V25, P19

[1] DETECTION OF SELENIUM CLUSTERING IN GAAS BY TRANSMISSION ELECTRON MICROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 760 - &

[2] TWINS AND STACKING FAULTS IN VAPOR GROWN GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (06) : 927 - &

[3] Bass S. J., 1968, Journal of Crystal Growth, V3-4Spe, P286, DOI 10.1016/0022-0248(68)90155-3

[4] BASS SJ, 1968, J CRYST GROWTH, V2, P169

[5] PREPARATION OF GAAS SPECIMENS FOR TRANSMISSION ELECTRON MICROSCOPY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (10) : 1088 - +

[6] LOW-TEMPERATURE REACTOR IRRADIATION EFFECTS IN METALS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (06) : 639 - 644

[7] DISLOCATIONS IN MECHANICALLY DEFORMED GE [J]. ACTA METALLURGICA, 1962, 10 (OCT): : 993 - &

[8] TRIPYRAMIDS AND ASSOCIATED DEFECTS IN EPITAXIAL SILICON LAYERS [J]. PHILOSOPHICAL MAGAZINE, 1965, 11 (113): : 1007 - &

[9] PREPARATION OF [100]-ORIENTED FOILS OF GAAS FOR TRANSMISSION ELECTRON MICROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) : 1980 - &

[10] CAHN RW, 1964, MET SOC C AIME, V25, P19