QUANTUM DISTRIBUTED MODEL OF THE RESONANT-TUNNELING TRANSISTOR

被引：4

作者：

TANIYAMA, H

TOMIZAWA, M

YOSHII, A

机构：

[1] NTT LSI Labs., Atsugi City Kanagawa Prefecture

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 03期

关键词：

D O I：

10.1109/16.275212

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two-dimensional simulation is crucial in the analysis of the transport characteristics of a resonant tunneling transistor that has a base electrode attached to the well region of a double barrier structure because of the transistor's two-dimensional heterogeneousness. We propose a novel numerical model of the resonant tunneling transistor that includes two-dimensional potential, distribution and two dimensional spatial current distribution. By using the mode, it is found that the transistor's I-V characteristics are strongly dependent on its internal well resistance with the present model.

引用

页码：294 / 298

页数：5

共 8 条

[1] THEORY OF RESONANT TUNNELING IN A VARIABLY SPACED MULTIQUANTUM WELL STRUCTURE - AN AIRY FUNCTION-APPROACH [J].