1.24-1.66-MU-M QUANTUM ENERGY TUNING FOR SIMULTANEOUSLY GROWN INGAAS/INP QUANTUM-WELLS BY SELECTIVE-AREA METALORGANIC VAPOR-PHASE EPITAXY

For the purpose of achieving a wide variety of photonic integrated circuits application, optimum selective mask design in selective-area metalorganic vapor phase epitaxy (MOVPE) is experimentally investigated in order to obtain multiple quantum well (MQW) layers with wide bandgap controllable range and with high optical crystal quality. Dependence of compositional change and layer flatness on mask size was systematically examined for selectively grown InGaAs/InP layers. We found that the open space width between SiO2 stripes is a key design parameter for obtaining uniform distribution of thickness and good characteristics in photoluminescence. The open space width was therefore optimized to be 10 mu m or more in our growth conditions, which is much larger than the effective surface migration length and smaller than the vapor phase diffusion length of group III species. Based on this mask design, we demonstrated an extremely wide quantum energy tuning range of 253 meV for simultaneously grown InGaAs/InP MQW structures. High luminescence efficiency was maintained throughout the tuning range.