SELECTIVE AREA GROWTH OF INGAASP/INP WAVE-GUIDE MODULATOR STRUCTURES BY CHEMICAL BEAM EPITAXY

被引：13

作者：

CHIU, TH ^{[1
]}

CHEN, Y ^{[1
]}

ZUCKER, J ^{[1
]}

MARSHALL, JL ^{[1
]}

SHUNK, S ^{[1
]}

CHU, SNG ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90598-Q

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The cause for the observed photoluminescence (PL) red shift for small linear dimension in the selective area epitaxy of InxGa1-xAsyP1-y has been investigated. In the case of InAsP/InP MQW, there is no clear evidence to support an enhancement of overall In incorporation rate for waveguide stripe of width as narrow as 2 mum. The growth habit near the edge as a result of sidewall preparation has an important consequence on the quantum well thickness and possibly the composition. The observed PL red shift in both the quaternary and ternary MQW structures with reducing stripe width is discussed with the insight obtained from the cross-section transmission electron microscopy.

引用

页码：169 / 174

页数：6

共 17 条

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