NEW LOW CAPACITANCE TRANSVERSE JUNCTION STRIPE ALGAAS/GAAS LASER FOR PLANAR LASER-MESFET INTEGRATION

被引：6

作者：

BRILLOUET, F

RAO, EVK

BEERENS, J

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 02期

关键词：

D O I：

10.1049/el:19880064

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：97 / 99

页数：3

共 7 条

[1]

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[2]

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[4]

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[5] DISORDERING OF GA1-XALXAS-GAAS QUANTUM WELL STRUCTURES BY DONOR SULFUR DIFFUSION [J].

RAO, EVK ;

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BRILLOUET, F ;

ALEXANDRE, F ;

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APPLIED PHYSICS LETTERS, 1985, 46 (09) :867-869

[6] TRANSVERSE JUNCTION BURIED HETEROSTRUCTURE (TJ-BH) ALGAAS DIODE-LASER [J].

SUZUKI, Y ;

MUKAI, S ;

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SATO, T .

ELECTRONICS LETTERS, 1987, 23 (08) :384-386

[7] HIGH-FREQUENCY CHARACTERISTICS OF DIRECTLY MODULATED INGAASP RIDGE WAVE-GUIDE AND BURIED HETEROSTRUCTURE LASERS [J].

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KAMINOW, IP .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1984, 2 (04) :385-393

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