THERMAL ETCHING OF ALPHA-SIC CRYSTALS IN ARGON

被引：11

作者：

SWIDERSKI, I

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1972年 / 16卷 / 01期

关键词：

D O I：

10.1016/0022-0248(72)90079-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：1 / +

页数：1

共 8 条

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[3] CHEMICAL ETCHING OF SILICON CARBIDE WITH HYDROGEN [J].

CHU, TL ;

CAMPBELL, RB .

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[5] IDENTIFICATION OF (0001) AND (0001) SURFACES OF SILICON CARBIDE [J].

HARRIS, JM ;

GATOS, HC ;

WITT, AF .

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[6] ETCHING CHARACTERISTICS OF SILICON CARBIDE IN HYDROGEN [J].

HARRIS, JM ;

GATOS, HC ;

WITT, AF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (03) :380-&

[7] EPITAXIAL GROWTH OF SILICON CARBIDE [J].

JENNINGS, VJ ;

SOMMER, A ;

CHANG, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) :728-&

[8]

Swiderski I., 1969, Journal of Crystal Growth, V5, P59, DOI 10.1016/0022-0248(69)90076-1

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