A NEW PROCEDURE FOR STATIC RAM EVALUATION UNDER X-RAY PULSES

被引：7

作者：

MAREC, R

MARY, P

FERRANT, R

FAIRBANK, X

GAILLARD, R

PALAU, JM

GASIOT, J

机构：

[1] LRBA,F-27207 VERNON,FRANCE

[2] THOMSON CSF,SEMICOND SPECIFIQUES,F-38521 ST EGREVE,FRANCE

[3] UNIV MONTPELLIER 2,CTR ELECTR MONTPELLIER,F-34095 MONTPELLIER 5,FRANCE

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 06期

关键词：

D O I：

10.1109/23.340603

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An original method, to identify the initial patterns that are the most favourable to obtain upsets under X-ray pulses, has been developed on Static RAMs in the standby mode. The results obtained with these initial patterns are interesting in order to analyse the radiation induced failures.

引用

页码：2467 / 2473

页数：7