INDIUM PROFILES IN INGAAS WITH HEAVY-ION RBS

被引：5

作者：

DOBELI, M ^{[1
]}

HAUBERT, PC ^{[1
]}

TOMBRELLO, TA ^{[1
]}

CHYI, JI ^{[1
]}

HUANG, D ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1990年 / 52卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0168-583X(90)90604-S

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The indium profile of MBE-grown InxGa1-xAs/GaAs single quantum well structures and InxGa1-xAs layers on InAlAs buffer layers have been measured with heavy ion Rutherford backscattering using a time-of-flight detector. The depth resolution of the method is better than 30 Å at the sample surface using 15 MeV 35Cl ions. The results for the average indium molar fraction are compared with photo reflectance measurements. The aluminum molar fraction in the InAlAs buffer layer has been profiled by nuclear reaction analysis. © 1990.

引用

页码：72 / 78

页数：7

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