MODELING OF 3-DIMENSIONAL EFFECTS ON TEMPERATURE UNIFORMITY IN RAPID THERMAL-PROCESSING OF 8 INCH WAFERS

被引:15
作者
KNUTSON, KL
CAMPBELL, SA
DUNN, F
机构
[1] AG ASSOCIATES,SUNNYVALE,CA 94089
[2] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
关键词
D O I
10.1109/66.286833
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A three-dimensional steady-state model of the industry-standard AG Associates 4108 Heatpulse Rapid Thermal Processing system has been developed for the study of thermal uniformity across 8 inch wafers. The model combines radiation energy transfer among all solid surfaces in the chamber with energy transfer among the chamber materials and to the process ambient. Surfaces included are those of the tungsten filaments of the lamps, the silicon wafer, the polysilicon annular thermal guard ring, the quartz process tube, and the gold reflectors which surround the lamps and process tube. These surfaces are divided into approximately 4800 individual surface elements for the radiation transfer allowing very accurate thermal analysis. The model has previously been shown to provide very good agreement with experiment for temperature distributions across an 8 inch wafer. The model is presently used to make quantitative examinations of asymmetric effects occuring in a RTP chamber which cannot be examined by 2-dimensional models. Situations examined include the effect of nonuniform lamp power distributions. Also examined is tilting of the wafer with respect to the flow tube and reflective chamber.
引用
收藏
页码:68 / 72
页数:5
相关论文
共 17 条
[1]  
Aspnes D E, 1988, PROPERTIES SILICON
[2]   TRANSIENT EFFECTS IN RAPID THERMAL-PROCESSING [J].
CAMPBELL, SA ;
KNUTSON, KL .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1992, 5 (04) :302-307
[3]   STEADY-STATE THERMAL UNIFORMITY AND GAS-FLOW PATTERNS IN A RAPID THERMAL-PROCESSING CHAMBER [J].
CAMPBELL, SA ;
AHN, KH ;
KNUTSON, KL ;
LIU, BYH ;
LEIGHTON, JD .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1991, 4 (01) :14-20
[4]  
CHO BJ, 1993, IN PRESS APR RTP EQU
[5]  
DEGERTEKIN FL, 1993, APR P MAT RES SOC
[6]  
Howell J. R., 1982, CATALOG RAD CONFIGUR
[7]   SIMULATION OF TEMPERATURE EFFECTS DURING RAPID THERMAL-PROCESSING [J].
KAKOSCHKE, R ;
BUSSMANN, E .
RAPID THERMAL ANNEALING / CHEMICAL VAPOR DEPOSITION AND INTEGRATED PROCESSING, 1989, 146 :473-482
[8]  
KNUTSON KL, 1993, IN PRESS APR P MAT R
[9]  
LIENHARD JH, 1987, HEAT TRANSFER TXB, P595
[10]   THERMAL AND STRESS-ANALYSIS OF SEMICONDUCTOR WAFERS IN A RAPID THERMAL-PROCESSING OVEN [J].
LORD, HA .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1988, 1 (03) :105-114