TRANSIENT EFFECTS IN RAPID THERMAL-PROCESSING

被引：19

作者：

CAMPBELL, SA

KNUTSON, KL

机构：

[1] University of Minnesota, Department of Electrical Engineering, Minneapolis, MN 55455

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 1992年 / 5卷 / 04期

关键词：

D O I：

10.1109/66.175362

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using a realistic model of a rapid thermal processing chamber including Navier-Stokes calculations of the gas losses, the stresses and yield strengths of silicon wafers were determined for several linear ramp rates. It was found that the stress to yield strength ratio is a sensitive function of the ramp rate and the radiant uniformity. Radiation patterns that produce good steady state thermal uniformity overheat the wafer edges during heating transients leading to high stress levels.

引用

页码：302 / 307

页数：6

共 10 条

[1]

ALEXANDER H, 1968, SOLID STATE PHYSICS, V27

[2]

CAMPBELL SA, 1991, IEEE T SEMICOND MANU, V4

[3]

KNUTSON KL, 1990, RAPID THERMAL INTEGR, P224

[4]

KONDO Y, 1981, SEMICONDUCTOR SILICO