CLIMB ASYMMETRY IN DEGRADED GALLIUM-ARSENIDE LASERS

被引：15

作者：

HUTCHINSON, PW

DOBSON, PS

机构：

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1980年 / 41卷 / 04期

关键词：

D O I：

10.1080/01418618008239336

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：601 / 614

页数：14

共 15 条

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[3]

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[6] PREFERENTIAL PRECIPITATION ON DISLOCATION LOOPS IN TE-DOPED GALLIUM-ARSENIDE [J].

HUTCHINSON, PW ;

DOBSON, PS .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1978, 38 (01) :15-23

[7] DEFECT STRUCTURE OF DEGRADED HETEROJUNCTION GAALAS-GAAS LASERS [J].

HUTCHINSON, PW ;

DOBSON, PS ;

OHARA, S ;

NEWMAN, DH .

APPLIED PHYSICS LETTERS, 1975, 26 (05) :250-252

[8] DEFECT STRUCTURE OF DEGRADED GAALAS-GAAS DOUBLE HETEROJUNCTION LASERS [J].

HUTCHINSON, PW ;

DOBSON, PS .

PHILOSOPHICAL MAGAZINE, 1975, 32 (04) :745-754

[9] GENERATION OF POINT-DEFECTS IN GAAS BY ELECTRON-HOLE RECOMBINATION AT DISLOCATIONS [J].

HUTCHINSON, PW ;

DOBSON, PS ;

WAKEFIELD, B ;

OHARA, S .

SOLID-STATE ELECTRONICS, 1978, 21 (11-1) :1413-&

[10] ORIGIN OF DISLOCATION CLIMB DURING LASER OPERATION [J].

OHARA, S ;

HUTCHINSON, PW ;

DOBSON, PS .

APPLIED PHYSICS LETTERS, 1977, 30 (08) :368-371

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