COIMPLANTATION AND ELECTRICAL-ACTIVITY OF C IN GAAS - STOICHIOMETRY AND DAMAGE EFFECTS

被引：29

作者：

MOLL, AJ ^{[1
]}

YU, KM ^{[1
]}

WALUKIEWICZ, W ^{[1
]}

HANSEN, WL ^{[1
]}

HALLER, EE ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 19期

关键词：

D O I：

10.1063/1.107004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have coimplanted carbon and a series of elements (B, N, Al, P, Ar, Ga, As, and Kr) in GaAs to study the effect of both implant damage and stoichiometry on activation. Electrical activity of C was found to increase due to the additional damage caused by coimplantation of a heavy element regardless of the chemical nature of the coimplant. Maintaining stoichiometry by coimplanting a group III element further increased activation in substrates heavily damaged during implantation. Activation of 65 +/- 3%, corresponding to a sheet free-carrier concentration of 3.5 X 10(14) cm-2, was achieved by coimplanting Ga and annealing at 950-degrees-C for 10 s.

引用

页码：2383 / 2385

页数：3

共 20 条

[1] CARBON DOPING OF III-V-COMPOUNDS GROWN BY MOMBE [J].

ABERNATHY, CR ;

PEARTON, SJ ;

REN, F ;

HOBSON, WS ;

FULLOWAN, TR ;

KATZ, A ;

JORDAN, AS ;

KOVALCHICK, J .

JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) :375-382

[2] LATTICE CONTRACTION DUE TO CARBON DOPING OF GAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].

DELYON, TJ ;

WOODALL, JM ;

GOORSKY, MS ;

KIRCHNER, PD .

APPLIED PHYSICS LETTERS, 1990, 56 (11) :1040-1042

[3] GROWTH AND DIFFUSION OF ABRUPT ZINC PROFILES IN GALLIUM-ARSENIDE AND HETEROJUNCTION BIPOLAR-TRANSISTOR STRUCTURES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

ENQUIST, P ;

HUTCHBY, JA ;

DELYON, TJ .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) :4485-4493

[4] ION-IMPLANTATION AND LOW-TEMPERATURE EPITAXIAL REGROWTH OF GAAS [J].

GRIMALDI, MG ;

PAINE, BM ;

NICOLET, MA ;

SADANA, DK .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4038-4046

[5] VERY HIGH-CARBON INCORPORATION IN METALORGANIC VAPOR-PHASE EPITAXY OF HEAVILY DOPED P-TYPE GAAS [J].

HANNA, MC ;

LU, ZH ;

MAJERFELD, A .

APPLIED PHYSICS LETTERS, 1991, 58 (02) :164-166

[6]

HARRIS JS, 1971, 2ND P INT C ION IMPL, P157

[7]

Heckingbottom R., 1973, RADIAT EFF, V17, P31

[8]

MADOK JH, 1992, MATER RES SOC S P, V240, P777

[9] RAPID THERMAL ANNEALING OF MG+ + AS+ DUAL IMPLANTS IN GAAS [J].

PATEL, KK ;

SEALY, BJ .

APPLIED PHYSICS LETTERS, 1986, 48 (21) :1467-1469

[10]

Paulson W. M., 1984, Semi-Insulating III-V materials, P53

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