RAPID THERMAL ANNEALING OF MG+ + AS+ DUAL IMPLANTS IN GAAS

被引：29

作者：

PATEL, KK

SEALY, BJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 21期

关键词：

D O I：

10.1063/1.96891

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1467 / 1469

页数：3

共 12 条

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[7] ELECTRICAL PROFILING AND OPTICAL ACTIVATION STUDIES OF BE-IMPLANTED GAAS [J].

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[8]

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[9] RAPID THERMAL ANNEALING OF BE, SI, AND ZN IMPLANTED GAAS USING AN ULTRAHIGH POWER ARGON ARC LAMP [J].

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[10]

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