SURFACE CORE-LEVEL SHIFTS IN CAF2-ON-SI(111) FILMS - EXPERIMENT AND THEORY

被引：17

作者：

ROTENBERG, E

DENLINGER, JD

HESSINGER, U

LESKOVAR, M

OLMSTEAD, MA

机构：

[1] UNIV WASHINGTON FM15, DEPT PHYS, SEATTLE, WA 98195 USA

[2] LAWRENCE BERKELEY LAB, CTR ADV MAT, BERKELEY, CA 94720 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 04期

关键词：

D O I：

10.1116/1.586957

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using a combination of in situ x-ray photoelectron spectroscopy and x-ray photoelectron diffraction, we have resolved surface core-level shifts for Ca and F atoms in thin (three-eight layers) CaF2-on-Si(111) films. These values are 0.7 +/- 0.1 eV towards higher binding energy for Ca 2p electrons and 0.6 +/- 0.1 eV towards lower kinetic energy for F KVV electrons. These shifts are in good agreement with a simple extra-atomic electrostatic model in which the shifts are due to the change in both the Madelung potential and the polarization response (relaxation) at the surface. We find no evidence for altered ionicity at the CaF2(111) surface.

引用

页码：1444 / 1448

页数：5

共 16 条

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