THEORY OF B-ASI COMPLEXES IN GALLIUM-ARSENIDE

被引：3

作者：

JONES, R ^{[1
]}

OBERG, S ^{[1
]}

机构：

[1] UNIV LULEA,DEPT MATH,S-95187 LULEA,SWEDEN

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 03期

关键词：

D O I：

10.1088/0268-1242/7/3/027

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ab initio local density functional cluster theory is used to investigate the structure, electronic and vibrational properties of two interstitial B complexes, namely B(Ga)-AS(i) and B(As)-AS(i), in GaAs. Our findings support the split-interstitial model of Brozel and Newman. The calculated modes of the first defect are in good agreement with those observed and their isotope shifts are very well given. We also find that the defect formed on complexing with AS(i)-, as in n-GaAs, has an occupied level close to E(c) and would not be stable in irradiated material.

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页码：429 / 431

页数：3

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