DIFFERENCE OF SI SELECTIVE GROWTH ON AL2O3 AND SIO2 SUBSTRATES BY ELECTRON-BEAM IRRADIATION METHOD

Based on a proposed growth model of Si selective epitaxy on Al2O3, the selective epitaxy of Si on both Al2O3 and SiO2/Si substrates was investigated. It is clarified that the incubation time for the Si growth on Al2O3 depends on electron dose density and growth conditions. The incubation time increased with increasing electron dose density from 10(15) to 10(18) electrons/cm(2). Thickness of the selectively grown layer is determined by taking the product of the growth rate and the incubation time difference. Selective Si deposition on SiO2/Si substrates was studied using an electron-beam irradiation method, because SiO2 is also the oxide material as Al2O3,and the same phenomena could be expected from our proposed mechanism. It was confirmed that the selective growth of Si was possible on the SiO2/Si substrate modified by electron beam irradiation. However, Si deposition on SiO2 occurred on the irradiated area, in contrast to the case of Si on Al2O3.