ELECTRON-IRRADIATION AND SELECTIVE SI EPITAXIAL-GROWTH ON AL2O3

被引：1

作者：

ISHIDA, M

TOMITA, T

TAYANAKA, H

NAKAMURA, T

机构：

[1] Department of Electric and Electronic Engineering, Toyohashi University of Technology, Toyohashi, 441, Tempaku-cho

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 91卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(94)96304-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The surface changes on sapphire (single crystalline alpha-Al2O3) and epitaxial gamma-Al2O3(100) on Si(100) after electron beam irradiation were studied by X-ray photoelectron spectroscopy (XPS). The irradiated surface showed that the loss of oxygen atoms began at a dose of 1.0 x 10(15) electrons/CM2 and became catastrophic at 1.0 x 10(16). The concentration of Al atoms on the surface did not change and a metal-like Al layer was formed. At doses of more than 1 x 10(16), no Si film was deposited on the irradiated surface due to the different adsorption and decomposition efficiency, which means direct Si selective epitaxy.

引用

页码：654 / 658

页数：5

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