SELECTIVE EPITAXIAL-GROWTH OF SI ON SAPPHIRE USING ELECTRON-BEAM IRRADIATION

被引：3

作者：

SAWADA, K ^{[1
]}

ISHIDA, M ^{[1
]}

NAKAMURA, T ^{[1
]}

SUZAKI, T ^{[1
]}

机构：

[1] TOYOKO KAGAKU CO LTD,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 16期

关键词：

D O I：

10.1063/1.102222

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1636 / 1638

页数：3

共 7 条

[1] SELECTIVE GROWTH CONDITION IN DISILANE GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY [J].

HIRAYAMA, H ;

TATSUMI, T ;

AIZAKI, N .

APPLIED PHYSICS LETTERS, 1988, 52 (26) :2242-2243

[2] GROWTH AND PROPERTIES OF SI FILMS ON SAPPHIRE WITH PREDEPOSITED AMORPHOUS SI LAYERS [J].

ISHIDA, M ;

YASUDA, Y ;

OHYAMA, H ;

WAKAMATSU, H ;

ABE, H ;

NAKAMURA, T .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (12) :4073-4078

[3] EPITAXIAL-GROWTH OF SOS FILMS WITH AMORPHOUS SI BUFFER LAYER [J].

ISHIDA, M ;

OHYAMA, H ;

SASAKI, S ;

YASUDA, Y ;

NISHINAGA, T ;

NAKAMURA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (07) :L541-L544

[4] CHARACTERIZATION OF SOS FILMS GROWN WITH AMORPHOUS SI BUFFER LAYERS BY MOS FETS [J].

ISHIDA, M ;

YASUDA, Y ;

WAKAMATSU, H ;

ABE, H ;

NISHINAGA, T ;

NAKAMURA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07) :L438-L440

[5]

ISHIDA M, UNPUB

[6] FAULT-FREE SILICON AT THE SILICON-SAPPHIRE INTERFACE [J].

PONCE, FA .

APPLIED PHYSICS LETTERS, 1982, 41 (04) :371-373

[7]

SAWADA K, IN PRESS J CRYST GRO

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