SELECTIVE GROWTH CONDITION IN DISILANE GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY

被引：88

作者：

HIRAYAMA, H

TATSUMI, T

AIZAKI, N

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 26期

关键词：

D O I：

10.1063/1.99654

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2242 / 2243

页数：2

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共 8 条

[1] SILICON MOLECULAR-BEAM EPITAXY - 1984-1986
BEAN, JC
[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 411 - 420
[2] BULK-QUALITY BIPOLAR-TRANSISTORS FABRICATED IN LOW-TEMPERATURE (TDEP=800-DEGREES-C) EPITAXIAL SILICON
BURGER, WR
REIF, R
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (20) : 1447 - 1449
[3] GATOS SM, 1987, J VAC SCI TECHNOL A, V5, P628
[4] GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY USING SILANE
HIRAYAMA, H
TATSUMI, T
OGURA, A
AIZAKI, N
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (26) : 2213 - 2215
[5] HIRAYAMA H, UNPUB
[6] MONOLITHIC INTEGRATION USING DIFFERENTIAL SI-MBE
KASPER, E
HERZOG, HJ
WORNER, K
[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 458 - 462
[7] LOW-TEMPERATURE SILICON EPITAXY USING SI2H6
MIENO, F
NAKAMURA, S
DEGUCHI, T
MAEDA, M
INAYOSHI, K
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) : 2320 - 2323
[8] OHTA Y, 1983, THIN SOLID FILMS, V106, P3