SILICON MOLECULAR-BEAM EPITAXY - 1984-1986

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (22) : 2441 - 2444

[2] ALLEN FG, 1985, 1ST P INT S SIL MOL, P3

[3] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[4] PSEUDOMORPHIC GROWTH OF GEXSI1-X ON SILICON BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 102 - 104

[5] SILICON MBE APPARATUS FOR UNIFORM HIGH-RATE DEPOSITION ON STANDARD FORMAT WAFERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (02): : 137 - 142

[6] ARBITRARY DOPING PROFILES PRODUCED BY SB-DOPED SI MBE [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 654 - 656

[7] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[8] STRAINED-LAYER EPITAXY OF GERMANIUM-SILICON ALLOYS [J]. SCIENCE, 1985, 230 (4722) : 127 - 131

[9] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 907 - 913

[10] SILICON MBE - FROM STRAINED-LAYER EPITAXY TO DEVICE APPLICATION [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 444 - 451

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (22) : 2441 - 2444

[2] ALLEN FG, 1985, 1ST P INT S SIL MOL, P3

[3] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[4] PSEUDOMORPHIC GROWTH OF GEXSI1-X ON SILICON BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 102 - 104

[5] SILICON MBE APPARATUS FOR UNIFORM HIGH-RATE DEPOSITION ON STANDARD FORMAT WAFERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (02): : 137 - 142

[6] ARBITRARY DOPING PROFILES PRODUCED BY SB-DOPED SI MBE [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 654 - 656

[7] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[8] STRAINED-LAYER EPITAXY OF GERMANIUM-SILICON ALLOYS [J]. SCIENCE, 1985, 230 (4722) : 127 - 131

[9] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 907 - 913

[10] SILICON MBE - FROM STRAINED-LAYER EPITAXY TO DEVICE APPLICATION [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 444 - 451