NEW ISOELECTRONIC TRAP - ANTIMONY IN INDIUM-PHOSPHIDE

被引：9

作者：

BISHOP, SG

SHANABROOK, BV

KLEIN, PB

HENRY, RL

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.38.8469

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8469 / 8472

页数：4

共 18 条

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