DEFECT RELAXATION IN HYDROGENATED AMORPHOUS-SILICON

被引：6

作者：

CRANDALL, RS

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 114卷

关键词：

D O I：

10.1016/0022-3093(89)90661-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：597 / 599

页数：3

共 11 条

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[3]

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[5]

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[6] ANNEALING BEHAVIOR OF LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON ALLOYS [J].

GUHA, S ;

HUANG, CY ;

HUDGENS, SJ .

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[7] CONNECTION BETWEEN THE MEYER-NELDEL RELATION AND MULTIPLE-TRAPPING TRANSPORT [J].

JACKSON, WB .

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[8] LIGHT-INDUCED EFFECTS AND THEIR ANNEALING BEHAVIOR IN A-SI-H [J].

KUMEDA, M ;

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MORIMOTO, A ;

SHIMIZU, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (08) :L654-L656

[9] EQUILIBRIUM TEMPERATURE AND RELATED DEFECTS IN INTRINSIC GLOW-DISCHARGE AMORPHOUS-SILICON [J].

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TSU, R .

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[10]

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