GAS-SOURCE MOLECULAR-BEAM EPITAXY OF ALTERNATED TENSILE COMPRESSIVE STRAINED GAINASP MULTIPLE-QUANTUM WELLS EMITTING AT 1.5 MU-M

被引：25

作者：

EMERY, JY ^{[1
]}

STARCK, C ^{[1
]}

GOLDSTEIN, L ^{[1
]}

PONCHET, A ^{[1
]}

ROCHER, A ^{[1
]}

机构：

[1] CEMES,LOE,CNRS,F-31055 TOULOUSE,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

Gallium indium arsenide-phosphides - Gas source molecular beam epitaxy - Multiple quantum wells - Quantum well lasers - Strained quantum wells;

D O I：

10.1016/0022-0248(93)90613-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Compressive and tensile strained GaInAsP layers as well as zero-net strain multiple quantum wells, grown by gas source molecular beam epitaxy, have been investigated. Reflection high energy electron diffraction patterns show two-dimensional growth for compressive strained layers (DELTAa / a < 1.5%). Three-dimensional growth is observed after a few nanometers for tensile strained layers even for low tensile value (DELTAa / a < - 0.2%). Transmission electron microscopy shows that three-dimensional growth of a tensile strained layer is related to a quasi-periodic composition modulation along the [110] in the epitaxial plane.

引用

页码：241 / 245

页数：5

共 9 条

[1] VERY NARROW-LINEWIDTH (70KHZ) 1.55-MU-M STRAINED MQW DFB LASERS [J].