EXCITON PHOTOREFLECTANCE OF SEMICONDUCTING LAYER COMPOUND GATE

被引：5

作者：

BURATTINI, E

GRANDOLFO, M

MARIUTTI, G

RANGHIASCI, C

机构：

[1] UNIV ROME, IST FIS, ROME, ITALY

[2] CONSIGLIO NAZL RICERCHE, SEZIONE ROME, GRP NAZL STRUTTURA MAT, ROME, ITALY

来源：

关键词：

D O I：

10.1016/0039-6028(73)90317-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：198 / 204

页数：7

共 13 条

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[7] GILITOS D, TO BE PUBLISHED
[8] EXCITON BINDING ENERGIES OF LAYER-TYPE SEMICONDUCTORS GASE AND GATE
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