ELECTRON-ENERGY LOSS SPECTROSCOPY AND WORK FUNCTION MEASUREMENTS ON SB/GAAS(110) - EXAMPLE OF AN UNPINNED INTERFACE

被引：23

作者：

LI, K

KAHN, A

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573764

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：958 / 961

页数：4

共 14 条

[1] ELECTRON-ENERGY LOSS SPECTROSCOPY FROM GAAS(110) INTERFACES
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[2] INSITU INVESTIGATION OF BAND BENDING DURING FORMATION OF GAAS-GE HETEROSTRUCTURES
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[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (02) : 141 - 144
[3] LEED-AES-TDS CHARACTERIZATION OF SB OVERLAYERS ON GAAS(110)
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[J]. SURFACE SCIENCE, 1982, 116 (02) : 380 - 390
[4] ANALYSIS OF LOW-ENERGY ELECTRON-DIFFRACTION AND ANGLE-RESOLVED PHOTOEMISSION FROM INP(110)-P(1 X 1)-SB (1 ML)
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PATON, A
LI, K
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[J]. SURFACE SCIENCE, 1985, 163 (2-3) : 391 - 408
[5] DYNAMICAL ANALYSIS OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM GAAS(110)-P(1X1)-SB(1ML)
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CARELLI, J
[J]. PHYSICAL REVIEW B, 1982, 26 (02): : 803 - 814
[6] DUKE CB, 1985, 1ST P INT C STRUCT S, P317
[7] ELECTRONIC-TRANSITIONS OF OXYGEN ADSORBED ON CLEAN SILICON (111) AND (100) SURFACES
IBACH, H
ROWE, JE
[J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1951 - 1957
[8] EVIDENCE FOR A SURFACE-STATE EXCITON ON GAAS(110)
LAPEYRE, GJ
ANDERSON, J
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (02) : 117 - 120
[9] STUDY OF THE GAAS-AU AND SI-SIO2 INTERFACE FORMATION BY THE KELVIN METHOD
LASSABATERE, L
PALAU, JM
VIEUJOTTESTEMALE, E
ISMAIL, A
RAISIN, C
BONNET, J
SOONCKINDT, L
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 540 - 545
[10] LI K, 1985, 17TH P INT C PHYS SE, P129

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