STUDY OF THE GAAS-AU AND SI-SIO2 INTERFACE FORMATION BY THE KELVIN METHOD

[1] BONNET J, 1980, 4TH P INT C SOL SURF, P1129

[2] BONNET J, 1977, MECO 77

[3] INTERACTION OF METALS WITH SEMICONDUCTOR SURFACES [J]. APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL): : 249 - 267

[4] INTERFACE CHEMICAL-REACTION AND DIFFUSION OF THIN METAL-FILMS ON SEMICONDUCTORS [J]. THIN SOLID FILMS, 1982, 89 (04) : 461 - 469

[5] PHOTO-VOLTAGE SATURATION AND RECOMBINATION AT AL-GAAS INTERFACIAL LAYERS [J]. SURFACE SCIENCE, 1981, 102 (2-3) : 518 - 526

[6] FRANKL DR, 1966, SURF SCI, V6, P115

[7] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 727 - 729

[8] ON THE CHEMISORPTION OF GE ON GAAS(110) SURFACES - UPS AND WORK FUNCTION MEASUREMENTS [J]. APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL): : 332 - 347

[9] HELMS CR, 1981, 2ND INT C INS FILMS, P19

[10] HERMAN F, 1981, J VAC SCI TECHNOL, V19, P391

[1] BONNET J, 1980, 4TH P INT C SOL SURF, P1129

[2] BONNET J, 1977, MECO 77

[3] INTERACTION OF METALS WITH SEMICONDUCTOR SURFACES [J]. APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL): : 249 - 267

[4] INTERFACE CHEMICAL-REACTION AND DIFFUSION OF THIN METAL-FILMS ON SEMICONDUCTORS [J]. THIN SOLID FILMS, 1982, 89 (04) : 461 - 469

[5] PHOTO-VOLTAGE SATURATION AND RECOMBINATION AT AL-GAAS INTERFACIAL LAYERS [J]. SURFACE SCIENCE, 1981, 102 (2-3) : 518 - 526

[6] FRANKL DR, 1966, SURF SCI, V6, P115

[7] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 727 - 729

[8] ON THE CHEMISORPTION OF GE ON GAAS(110) SURFACES - UPS AND WORK FUNCTION MEASUREMENTS [J]. APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL): : 332 - 347

[9] HELMS CR, 1981, 2ND INT C INS FILMS, P19

[10] HERMAN F, 1981, J VAC SCI TECHNOL, V19, P391